| Ku波段20W GaAs功率PHEMT |
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| 引用本文： | 钟世昌,陈堂胜.Ku波段20W GaAs功率PHEMT[J].半导体学报,2006,27(10):1804-1807. |
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| 作者姓名： | 钟世昌 陈堂胜 |
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| 作者单位： | 南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016 |
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| 摘 要： | 报道了采用介质辅助T型栅工艺研制的GaAs功率PHEMT.在该T型栅工艺中栅长和栅帽的尺寸分别进行控制,实现了较好的工艺可控性和较高的工艺成品率.采用该工艺制作了总栅宽为19.2mm的功率PHEMT.用两枚这种芯片合成并研制的Ku波段内匹配功率管在14.0～14.5GHz频带内,输出功率大干20W,功率增益大于6dB,典型功率附加效率为31%.
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| 关 键 词： | T型栅 GaAs PHEMT 内匹配 |
| 文章编号： | 0253-4177(2006)10-1804-04 |
| 收稿时间： | 2/19/2006 7:22:59 PM |
| 修稿时间： | 5/26/2006 8:51:21 PM |
Ku-Band 20W GaAs Power PHEMT |
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| Zhong Shichang and Chen Tangsheng.Ku-Band 20W GaAs Power PHEMT[J].Chinese Journal of Semiconductors,2006,27(10):1804-1807. |
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| Authors: | Zhong Shichang and Chen Tangsheng |
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| Affiliation: | Nanjing Electronic Devices Institute,Nanjing 210016,China;Nanjing Electronic Devices Institute,Nanjing 210016,China |
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| Abstract: | A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported. The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved. GaAs power PHEMTs with a gate width of 19. 2ram and Ku-band internally matched transistors with the combination of two chips are developed. The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0-14.5GHz. |
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| Keywords: | T-shaped gate GaAs PHEMT internal matching |
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