Effect of Cl ion implantation on electrical properties of CuInSe2 thin films |
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| Authors: | Tooru Tanaka Toshiyuki Yamaguchi Takeshi Ohshima Hisayoshi Itoh Akihiro Wakahara Akira Yoshida |
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| Affiliation: | a Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan;b Department of Electrical Engineering, Wakayama College of Technology, Gobo 644-0023, Japan;c Japan Atomic Energy Research Institute, Takasaki 370-1292, Japan;d Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, Japan |
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| Abstract: | The effects of Cl ion implantation on the properties of CuInSe2 epitaxial thin films have been investigated. Using five kinds of accelerating energies, the doped layer with a constant profile of Cl concentration along the depth direction was fabricated. From the results of reflection of high-energy electron diffraction, the damages due to implantation were removed by annealing at 400°C in N2. The conductivity type in all implanted films was n-type, and the carrier concentration was increased with increasing Cl concentration in the thin films. Consequently, it is considered that Cl acts as a donor in CuInSe2. |
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| Keywords: | CuInSe2 Cl doping Ion implantation Solar cell Thin film |
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