Carrier-recombination statistics in a 2-level trapping system |
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| Authors: | Buckingham M.J. Faulkner E.A. |
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| Affiliation: | University of Reading, J. J. Thomson Laboratory, Reading, UK; |
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| Abstract: | When there is substantial interaction between two trap levels in the band gap, the carrier recombination in the depletion layer of a silicon p?n junction does not follow conventional Shockley?Read?Hall statistics. Such a system is capable of producing a current/voltage relationship approximating to the form I? exp (eV/1.5 kT). |
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