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Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC |
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| Authors: | B Jouault S Charpentier D Massarotti A Michon M Paillet J R Huntzinger A Tiberj A-A Zahab T Bauch P Lucignano A Tagliacozzo F Lombardi F Tafuri |
| Affiliation: | 1.Laboratoire Charles Coulomb (L2C),UMR 5221 CNRS-Université de Montpellier,Montpellier,France;2.Chalmers University of Technology,G?teborg,Sweden;3.Dipartimento di Ingegneria Industriale e dell’Informazione,Seconda Universitá di Napoli,Aversa (CE),Italy;4.CNR-SPIN,Napoli,Italy;5.CRHEA - Centre de Recherche sur l’Hétéroépitaxie et ses Applications,CNRS, rue Bernard Grégory,Valbonne,France;6.Dipartimento di Fisica,Università di Napoli Federico II,Napoli,Italy;7.INFN, Laboratori Nazionali di Frascati,Frascati,Italy |
| Abstract: | Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices. |
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