纳米多晶钨膜中He相关缺陷对H滞留的影响*

用磁控溅射方法制备纳米多晶钨膜, 采用X射线衍射(XRD), 扫描电子显微镜(SEM), 弹性反冲探测(ERD)和慢正电子束分析(SPBA)等手段研究了在高能He⁺和H⁺依次对其辐照后He相关缺陷对H滞留的影响。结果表明, 注He⁺钨膜在退火后从β型钨向α型钨转变; 钨膜中的He含量随着退火温度的提高而减少, 在873 K退火加剧钨膜中He原子的释放, 且造成钨膜空位型缺陷的增加和结构无序度的提高; 钨膜中的H滞留总量随着He滞留总量的减少略有下降。

Influence of Helium-Related Defects on Hydrogen Retention in Nano-Polycrystalline Tungsten Films

The influence of helium-related defects on hydrogen retention in magnetron sputtered nano-polycrystalline tungsten films, which had been sequentially irradiated by high energy helium and hydrogen ions, was investigated by means of X-ray diffraction (XRD), scanning electron microscope (SEM), elastic recoil detection (ERD) and slow positron beam analysis (SPBA). The results show that the helium ion implanted tungsten films would transform from β-W to α-W after annealing. After annealing at 873 K the release of helium atoms increased dramatically, while the open-volume defects and the degree of structural disorders in the films increased. Furthermore, the total retention of hydrogen in tungsten films decreased slightly with the decreasing of helium content.