| Affiliation: | (1) Department of Electrical and Computer Engineering, Concordia University, Montreal, QC, H3G 1M8, Canada;(2) Department of Electrical Engineering, Ecole Polytechnique de Montreal, Montreal, QC, H3C 3A7, Canada |
| Abstract: | New fault behaviors can emerge with the introduction of a drowsy mode to SRAMs. In this work, we show that, in addition to the data-retention faults that can occur during the drowsy mode, open defects in SRAM cells can also result in new fault behaviors when a memory is accessed immediately after wake-up. We first describe these new read-after-drowsy (RAD) fault behaviors and derive their corresponding fault primitives (FPs). Then, we propose a new March test, called March RAD, by inserting drowsy operations to a traditional test algorithm. Finally, the impact of the standby supply voltage on triggering the drowsy faults in SRAM cells is investigated. It is shown that, as the supply voltage is reduced in the drowsy mode to further cut down leakage, open defects with a parasitic resistance as small as 100 K Ω begin to cause faults. |
