| 半绝缘砷化镓材料的离子注入 |
| |
| 引用本文： | 曾庆高. 半绝缘砷化镓材料的离子注入[J]. 半导体光电, 1993, 14(4): 327-331,350 |
| |
| 作者姓名： | 曾庆高 |
| |
| 作者单位： | 重庆光电技术研究所 助工，永川 632163 |
| |
| 摘 要： | 概述了ＧａＡｓ材料的离子注入及有关的问题，如损伤退火，掺杂剂激活和载流子分布等。另外，还提出了几种改善掺杂效率的方法。
|
| 关 键 词： | 离子注入 退火 载流子分布 砷化镓 |
Ion Implantation of SI GaAs Materials |
| |
| Zeng Qinggao Chongqing Optoelectronics Research Institute,Yongchuan. Ion Implantation of SI GaAs Materials[J]. Semiconductor Optoelectronics, 1993, 14(4): 327-331,350 |
| |
| Authors: | Zeng Qinggao Chongqing Optoelectronics Research Institute Yongchuan |
| |
| Affiliation: | Zeng Qinggao Chongqing Optoelectronics Research Institute,Yongchuan 632163 |
| |
| Abstract: | In this paper, topics concerning ion implantation of SI GaAs materi- als, such as damage annealing, dopants activation and carrier profiles, are reviewed. In addition, several methods for improving electrical ectivation efficiency of dopants are proposed as well. |
| |
| Keywords: | Ion Implantation Annealing Carrier Profile |
| 本文献已被 CNKI 维普 等数据库收录！ |
