One-step electrodeposition of CuGaSe2 thin films |
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| Authors: | Fangyang LiuJia Yang Jiaolian ZhouYanqing Lai Ming JiaJie Li Yexiang Liu |
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| Affiliation: | a School of Metallurgical Science and Engineering, Central South University, Changsha Hunan 410083, Chinab Engineering Research Center of Advanced Battery Materials, the Ministry of Education, Changsha 410083, China |
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| Abstract: | CuGaSe2 thin films have been prepared by one-step electrodeposition and rapid thermal annealing process. According to composition and morphology analysis, deposition potential of − 0.6 V vs. SCE is considered to be optimum for electrodeposition. From the X-ray diffraction and Raman studies, the as-deposited film exhibits poor crystallinity without the evidence of CuGaSe2 or other Ga-containing phases, while the rapid thermal annealing-treated film shows chalcopyrite structure CuGaSe2 phase containing MoSe2 phase between the Mo substrate and the absorber and minor second phase Cu2 − xSe. The obtained CuGaSe2 thin film has a band gap of about 1.68 eV and p-type conductivity. |
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| Keywords: | Copper gallium selenide One-step electrodeposition Thin films Solar cells Scanning electron microscopy Photoelectrochemical measurements Optical properties Microstructure |
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