Effect of SiO2 Powder on Mirror Polishing of InP Wafers |
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| Authors: | Yuji Morisawa Isao Kikuma Naoki Takayama Manabu Takeuchi |
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| Affiliation: | (1) Department of Electrical and Electronic Engineering, Ibaraki University, 4-12-1 Nakanarusawa, 316 Hitachi, Japan;(2) Nihon Exceed Corporation, 4382-4 Uchimoriya, Mitsukaido, 303 Ibaraki, Japan |
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| Abstract: | This paper describes a mechanical-chemical polishing technique of InP wafers using NaOCl, citric acid, and SiO2 powder solutions. The polishing rate rapidly increases by adding SiO2 powder to NaOCl and citric acid solutions. We study the dependence of the polishing rate on SiO2 powder and discuss the mechanicalchemical effect of the mirror polishing of InP wafers with NaOCl, citric acid, and SiO2 powder solutions. We observe an increase in the polishing rate of InP wafers from 0.2 to 0.9 μm/min when SiO2 powder is added to NaOCl and citric acid solutions. |
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| Keywords: | InP wafers mechanical-chemical polishing |
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