Cell-based analytic statistical model with correlated parametersfor intrinsic breakdown of ultrathin oxides

The cell-based analytic statistical model, with the cell area A _O and the critical trap number per cell n_BD both as parameters, is one of the widely cited literature models in calculating the critical density of neutral electron traps that trigger the intrinsic breakdown of ultrathin oxides. This letter reports a new correlation between A_O and n_BD, which can effectively reduce the cell-based model to one with the only fitting parameter n_BD. Reproduction of charge-to-breakdown data has shown that (1) n_BD decreases for reduced oxide thicknesses and (2) the range of intrinsic breakdown is relatively narrowed for increasing areas. The work also addresses the ultimate thickness limit for breakdown, as set critically at n_BD=1