| Al/GaP(■)界面形成的初始阶段(英文) |
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| 引用本文： | 肖撼宇,卢学坤,丁训民,陈平,王迅. Al/GaP(■)界面形成的初始阶段(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 肖撼宇 卢学坤 丁训民 陈平 王迅 |
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| 作者单位： | 复旦大学表面物理实验室(肖撼宇，卢学坤，丁训民，陈平)，复旦大学表面物理实验室(王迅) |
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| 摘 要： |
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The First Stage of the AI/GaP(■) Interface Formation |
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| Abstract: | X-ray photoelectron spectroscopy(XPS), ultraviolet photoelectron spec-troscopy (UPS) and high resolution electron energy loss spectroscopy (HREELS)are used to s tudy aluminum deposition on the GaP(111) surface prepared by ioa sputtering followed by thermal annealing. Because of the very limited thickness of Al overlayer, only the initial stage of Al/GaP (111) interface formation is investigated. At this stage, a Ga/Al replce-ment reaction has already been induced, forming an AIP overlayer covered with segragated Ga atoms. The interband transition of 1.7eV found on the clean GaP(l11) surface is removed, Evidences on the changes of valence band structure are studied and discussed carefully. |
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