| MOSFET栅漏电流噪声模型研究 |
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| 引用本文： | 赖忠有,杜磊.MOSFET栅漏电流噪声模型研究[J].电子科技,2009,22(10):53-55. |
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| 作者姓名： | 赖忠有 杜磊 |
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| 作者单位： | 西安电子科技大学,技术物理学院,陕西,西安,710071 |
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| 基金项目： | 国家部委"十一五"预研基金资助项目，西安应用材料创新基金资助项目 |
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| 摘 要： | 随着MOSFET尺寸的不断减小,栅漏电流对器件特性的影响日益明显.栅漏电流噪声一方面影响器件性能,另一方面可用于栅介质质量表征,因此对其研究备受关注.由于栅介质噪声研究具有重要意义,文献中已经建立起各种各样的噪声模型,文中对其进行了归纳整理.在此基础上分析了各种模型的特性和局限性,进而探讨了其应用范围.
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| 关 键 词： | 栅漏电流 栅介质 噪声模型 |
Study of the Noise Model of Gate-Leakage Current in MOSFETs |
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| Lai Zhongyou,Du Lei.Study of the Noise Model of Gate-Leakage Current in MOSFETs[J].Electronic Science and Technology,2009,22(10):53-55. |
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| Authors: | Lai Zhongyou Du Lei |
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| Affiliation: | Lai Zhongyou,Du Lei(School of Technology Physics,Xidian University,Xi'an 710071,China) |
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| Abstract: | The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.The gate-leakage current noise affects the performance of the device,and also can be used as a tool to characterize the quality of gate oxide,and it therefore receives increasing attention.Because of the significance of gate dielectric noise study,various noise models have been presented.This paper makes a summary of them,analyzes the characteristic and limitations of each model and discusses t... |
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| Keywords: | gate-leakage current gate dielectric noise model |
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