| 高频振荡型接近开关 |
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| 引用本文： | 陈众起. 高频振荡型接近开关[J]. 电气应用, 2004, 0(8): 89-90 |
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| 作者姓名： | 陈众起 |
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| 作者单位： | 河北科技大学信息科学与工程学院,050054 |
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| 摘 要： | 详述了新型高频振荡接近开关的电路结构和工作原理。电路的特点是采用晶闸管VT3作为无触点开关输出电路。VT3触发电压不是用单结晶体管产生 ,而是用电容器C4 的充放电来产生。这种结构承受的负载电流大 ,可靠性高。续流二极管VD2 确保脉动直流电压过零值时使VT3关断
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| 关 键 词： | 高频振荡 涡流 晶闸管 触发电压 接近开关 |
| 修稿时间： | 2004-05-31 |
The High Frequency Oscilated Approach Switch |
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| Chen Zhongqi. The High Frequency Oscilated Approach Switch[J]. Electrotechnical Application, 2004, 0(8): 89-90 |
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| Authors: | Chen Zhongqi |
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| Affiliation: | Hebei University of Science and Technology |
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| Abstract: | The circuit structure of new type high frequency oscilated approach switcher is scrutinized. The attribute of semiconductor is using the thyristor VT 3 as a non touch switch outputting circuit .The injunction transistor does not cause the triggering volume of the VT 3.The triggering volume is caused by the recharging and releasing of the capacitor of C 4.The VD 2 assure the closing of VT 3, when the pulsing direct current voltage arrives at the zero value. |
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| Keywords: | oscillatory eddy current thyristor flip flop voltage approach switch |
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