Temperature and duration effects on microstructure evolution during copper wafer bonding |
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Authors: | K N Chen A Fan C S Tan R Reif |
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Affiliation: | (1) Microsystems Technology Laboratories, Massachusetts Institute of Technology, 02139 Cambridge, MA |
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Abstract: | Interfacial morphologies during Cu wafer bonding at bonding temperatures of 300–400°C for 30 min followed by an optional 30-min
or 60-min nitrogen anneal were investigated by means of transmission electron microscopy (TEM). Results showed that increased
bonding temperature or increased annealing duration improved the bonding quality. Wafers bonded at 400°C for 30 min followed
by nitrogen annealing at 400°C for 30 min, and wafers bonded at 350°C for 30 min followed by nitrogen annealing at 350°C for
60 min achieve the same excellent bonding quality. |
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Keywords: | Copper (Cu) wafer bonding microstructure |
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