Electron localization in sound absorption oscillations in the quantum Hall effect regime |
| |
Authors: | I L Drichko A M D’yakonov A M Kreshchuk T A Polyanskaya I G Savel’ev I Yu Smirnov A V Suslov |
| |
Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
| |
Abstract: | The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/Al0.25Ga0.75As heterostructure (with two-dimensional electron mobility μ=1.3×105 cm2/(V·s) at T=4.2 K) via a small gap has been investigated experimentally as a function of the frequency of the wave, the width of the
vacuum gap, the magnetic field, and the temperature. The magnetic field and frequency dependences of the high-frequency conductivity
(in the region 30–210 MHz) are calculated and analyzed. The experimental results can be explained if it assumed that there
exists a fluctuation potential in which current carrier localization occurs. The absorption of the surface acoustic waves
in an interaction with two-dimensional electrons localized in the energy “tails” of Landau levels is discussed.
Fiz. Tekh. Poluprovodn. 31, 451–458 (April 1997) |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|