Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering |
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| Authors: | HQ Li QF FangZG Zhu |
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| Affiliation: | a Laboratory of Internal Friction and Defects in Solids, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, PR China
b Hefei University of Technology, Hefei 230009, PR China |
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| Abstract: | Epitaxial trilayer films of La0.67Sr0.33MnO3 (LSMO)/La0.75MnO3 (L0.75MO)/La0.67Sr0.33MnO3 (LSMO) have been prepared on (0 0 1) oriented LaAlO3 substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R0) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films. |
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| Keywords: | A Thin films B Sputtering C Atomic force microscopy D X-ray diffraction |
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