10-Gb/s Direct Modulation up to 100 $^{circ}$C Using 1.3- $mu$m-Range Metamorphically Grown Strain Compensated InGaAs–GaAs MQW Laser on GaAs Substrate |
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| Authors: | Arai M Tadokoro T Fujisawa T Kobayashi W Nakashima K Yuda M Kondo Y |
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| Affiliation: | Photonics Labs., NTT Corp., Atsugi, Japan; |
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| Abstract: | We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25degC and 100degC, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85degC . |
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