| 退火损伤对Er注入GaAs和Yb注入InP发光的影响 |
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| 引用本文： | 曹望和,张联苏. 退火损伤对Er注入GaAs和Yb注入InP发光的影响[J]. 半导体学报, 1991, 12(2): 80-86 |
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| 作者姓名： | 曹望和 张联苏 |
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| 作者单位： | 中国科学院长春物理研究所 长春130021(曹望和)，中国科学院长春物理研究所 长春130021(张联苏) |
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| 摘 要： | 本文报道了CaAs∶Er、InP∶Yb发光样品的二次离子质谱、X-射线双晶衍射测量结果及其与Er离子的表面成份的关系.分析讨论了退火损伤对GaAs∶Er和InP∶Yb发光的影响以及Er~(3+)复合体发光中心模型.
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| 关 键 词： | 稀土离子 注入 GaAs InP 光致发光 |
Effect of Annealing Damages on Luminescences of Er,Yb-Implanted GaAs and InP |
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| Cao Wanghe/Changchun Institute of Physics,Academia SinicaChang Liansu/Changchun Institute of Physics,Academia Sinica. Effect of Annealing Damages on Luminescences of Er,Yb-Implanted GaAs and InP[J]. Chinese Journal of Semiconductors, 1991, 12(2): 80-86 |
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| Authors: | Cao Wanghe/Changchun Institute of Physics Academia SinicaChang Liansu/Changchun Institute of Physics Academia Sinica |
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| Abstract: | The photoluminescences of Er~+ or Yb~+-implanted GaAs and InP after annealing is repo-rted. The surface distribution of Er ions in GaAs: Er annealed samples is analysed by secon-dary ion mass spectroscopy (SIMS), and the rocking curves of the related luminescent samplesare measured by X-ray double crystal diffraction for GaAs: Er, InP:Er and InP:Yb. The ef-fects of the annealing damages on the luminescences of GaAs: Er and InP:Yb are investigated,and the luminescent center model of Er~(3+) complex is discussed. |
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| Keywords: | Rare earth ion GaAs InP Photoluminescence Luminescent center |
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