Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias |
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| Authors: | Erik V. Johnson Sjoerd Hoogland Ethan Klem Nazir Kherani Stefan Zukotynski |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 3G4;(2) Present address: LPICM, école Polytechnique, Palaiseau Cedex, 91128, France |
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| Abstract: | Characterization results on hydrogenated microcrystalline silicon (μc-Si:H) thin films grown in a Saddle Field (SF) PECVD system are presented. The microcrystalline content of the films is controlled by the application of a positive electrical bias to the film growth surface. The results of photoluminescence, atomic force microscopy, infrared-absorption, and electrical conductivity studies are presented. The results correlate to the changing microcrystalline content of the films in the same way as when microcrystalline content is influenced through growth parameters such as hydrogen dilution in other CVD techniques.
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