| 异质结双极晶体管的能带设计 |
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| 引用本文： | 谢孟贤,焦智贤,杜文宏. 异质结双极晶体管的能带设计[J]. 微电子学, 1991, 0(5) |
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| 作者姓名： | 谢孟贤 焦智贤 杜文宏 |
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| 作者单位： | 电子科技大学(谢孟贤，焦智贤)，电子科技大学(杜文宏) |
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| 摘 要： | 异质结双极晶体管(HBT)是一种新型的超高速、微波与毫米波半导体器件,可以有效地解决同质结双极晶体管中高速度与高放大的关系。本文以AlGaAs/GaAs npn HBT为例,讨论了HBT能带设计中的有关问题,并简要介绍了HBT的研究现状与发展方向。
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| 关 键 词： | 异质结结构 双极晶体管 半导体器件 能带设计 毫/微米波器件 |
Design of The Energy Band For Heterojunction Bipolar Transistors |
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| Xie Mengxian,Jiao Zhixian and Du Wenhong. Design of The Energy Band For Heterojunction Bipolar Transistors[J]. Microelectronics, 1991, 0(5) |
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| Authors: | Xie Mengxian Jiao Zhixian Du Wenhong |
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| Affiliation: | Univer. Electronic Sci. & Technol. of China |
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| Abstract: | The heterojunction bipolar transistor (HBT) is a novel superhigh speed micro- and milli-meter wave semiconductor device. It can achieve both high speed and high amplification,which is always a conflict in homojunction bipolar transistors. In this paper, the design of energy band for HBTs is discussed with AlGaAs/GaAs npn HBT as an example. Also, the state-of-the-art and the trend of development of HBTs are introduced in brief. |
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| Keywords: | Heterojunction structure Bipolar transistor Energy band design Milli- and micro-meter wave device |
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