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关于雪崩结开启电压和关断电压差别的研究
引用本文:张国青,韩德俊,朱长军,翟学军.关于雪崩结开启电压和关断电压差别的研究[J].半导体学报,2012,33(9):094003-5.
作者姓名:张国青  韩德俊  朱长军  翟学军
作者单位:[1]School of Science, Xi'an Polytechnic University, Xi'an 710048, China [2]The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, Beijing Normal University,Beijing Radiation Center, Beijing 100875, China
基金项目:西安工程大学博士科研启动基金
摘    要:本文详细研究了雪崩结导通电压和关断电压的差别。 当结特征尺度在微米量级时,这个差别将不能忽略, 这个结果与现有报道不一致,并且对对器件参数的正确表征有较大影响。 实验发现当结面积变小时, 这个差别将增大。 本文对该现象进行了分析, 给出了理论解释,认为这个现象是由于结导通的阈值增益随着结面积的减小而增加的缘故。在雪崩渐近电流公式中, 所谓的“击穿电压”实际上应该是雪崩结关断电压。 修正了传统的关于雪崩渐近电流和盖革模式雪崩光电二极管的增益公式。

关 键 词:雪崩光电二极管  关断电压  导通电压  pn结  设备特征  击穿电压  交界处  电流式
收稿时间:1/4/2012 11:38:35 PM

Turn-on and turn-off voltages of an avalanche p-n junction
Zhang Guoqing,Han Dejun,Zhu Changjun and Zhai Xuejun.Turn-on and turn-off voltages of an avalanche p-n junction[J].Chinese Journal of Semiconductors,2012,33(9):094003-5.
Authors:Zhang Guoqing  Han Dejun  Zhu Changjun and Zhai Xuejun
Affiliation:1. School of Science, Xi'an Polytechnic University, Xi'an 710048, China
2. The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, Beijing Normal University,Beijing Radiation Center, Beijing 100875, China
Abstract:Characteristics of the turn-on and turn-off voltage of avalanche p-n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-off voltage cannot be neglected when the size of the p-n junction is in the order of microns. The difference increases inversely with the area of a junction, exerting significant influences on characterizing some parameters of devices composed of small avalanche junctions. Theoretical analyses show that the mechanism for the difference lies in the increase effect of the threshold multiplication factor at the turn-on voltage of a junction when the area of a junction decreases. Moreover, the "breakdown voltage" in the formula of the avalanche asymptotic current is, in essence, the avalanche turn-off voltage, and consequently, the traditional expression of the avalanche asymptotic current and the gain of a Geiger mode avalanche photodiode were modified.
Keywords:Geiger mode avalanche photodiode  p-n junction  turn-on voltage  turn-off voltage
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