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Solar cells with Cu(In_1−xGa_x)S₂ thin films prepared by sulfurization

Authors:	Tsuyoshi Ohashi Yoshio Hashimoto Kentaro Ito

Abstract:	By rapid thermal processing of Cu/In/GaS precursors, good-quality CuIn_1–xGa_xS₂ films are synthesized. By suppressing the formation of In-rich hillocks, we could obtain homogeneous CuIn_1–xGa_xS₂ surfaces. A conversion efficiency of 12% has been achieved using a relatively low (1.2) Cu/In ratio.

Keywords:	CuInS₂ Thin film Sulfurization Rapid thermal processing
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