Rational Design of High‐Mobility Semicrystalline Conjugated Polymers with Tunable Charge Polarity: Beyond Benzobisthiadiazole‐Based Polymers |
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Authors: | Yang Wang Tsukasa Hasegawa Hidetoshi Matsumoto Takehiko Mori Tsuyoshi Michinobu |
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Affiliation: | Department of Organic and Polymeric Materials, Tokyo Institute of Technology, Meguro‐ku, Tokyo, Japan |
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Abstract: | High‐mobility semiconducting polymers composed of arylene vinylene and dithiophene‐thiadiazolobenzotriazole (SN) units are developed by three powerful design strategies, namely, backbone engineering, heteroatom substitution, and side‐chain engineering. First, starting from the quaterthiophene‐SN copolymer, a vinylene spacer is inserted into the quaterthiophene unit for constructing highly‐planar backbones. Second, heteroatoms (O and N atoms) are incorporated into the thienylene vinylene moieties to tune the electronic properties and intermolecular interactions. Third, the alkyl side chains are optimized to tune the solubility and self‐assembly properties. As a consequence, a remarkable thin film transistor performance is obtained. The very high hole mobility of 3.22 cm2 V?1 s?1 is achieved for the p‐type polymer, PSNVT‐DTC8, which is the highest value ever reported for the polymers based on the benzobisthiadiazole and its analogs. Moreover, heteroatom substitution efficiently varies the charge polarity of the polymers as in the case of the N atom substituted PSNVTz‐DTC16 displaying n‐type dominant ambipolar properties with the electron mobility of 0.16 cm2 V?1 s?1. Further studies using grazing‐incidence wide‐angle X‐ray scattering and atomic force microscopy have revealed the high crystallinities of the polymer thin films with strong π–π interactions and suitable polymer packing orientations. |
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Keywords: | backbone engineering crystallinities push– pull interactions semiconducting polymers thin film transistors |
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