An Ultrahigh Responsivity (9.7 mA W−1) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga2O3 Heterostructures |
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| Authors: | Bin Zhao Fei Wang Hongyu Chen Lingxia Zheng Longxing Su Dongxu Zhao Xiaosheng Fang |
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| Affiliation: | 1. Department of Materials Science, Fudan University, Shanghai, P. R. China;2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, P. R. China |
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| Abstract: | Highly crystallized ZnO–Ga2O3 core–shell heterostructure microwire is synthesized by a simple one‐step chemical vapor deposition method, and constructed into a self‐powered solar‐blind (200–280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W?1) at 251 nm with a high UV/visible rejection ratio (R 251 nm/R 400 nm) of 6.9 × 102 under zero bias. The self‐powered device has a fast response speed with rise time shorter than 100 µs and decay time of 900 µs, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self‐powered solar‐blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the high‐performance self‐powered photodetectors. |
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| Keywords: | heterojunctions self‐powered detectors solar‐blind photodetectors |
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