| CVD金刚石薄膜二次形核机制的研究 |
| |
| 引用本文： | 黄元盛,刘正义,邱万奇.CVD金刚石薄膜二次形核机制的研究[J].材料科学与工程学报,2001,19(1). |
| |
| 作者姓名： | 黄元盛 刘正义 邱万奇 |
| |
| 作者单位： | 华南理工大学机电工程系, |
| |
| 基金项目： | 广东省自然科学基金，高等学校博士学科点专项科研项目 |
| |
| 摘 要： | 根据实验观察分析提出了金刚石二次形核机制 ,此机制认为二次形核很容易在( 10 0 )晶面上和晶界上形成。通过比较 ( 10 0 )面的二次形核和形成新生长台阶的系统自由能差 ,可知当气氛中的碳氢基团浓度较大时 ,粘附在基底的碳氢基团发生堆集 ,如果堆集碳氢基团高度尺寸较大时将形成二次晶核。也对晶界二次形核的系统自由能差进行了推导 ,结果表明晶界二次形核是自发的 ,将导致体系自由能的下降。
|
| 关 键 词： | 金刚石 二次形核 生长台阶 碳氢基团 |
Study on a econd Nucleation Mechanism of CVD Diamond Films |
| |
| HUANG Yuan\|sheng,LIU Zheng\|yi.Study on a econd Nucleation Mechanism of CVD Diamond Films[J].Journal of Materials Science and Engineering,2001,19(1). |
| |
| Authors: | HUANG Yuan\|sheng LIU Zheng\|yi |
| |
| Abstract: | We describe a sceond nucleation mechanism of CVD diamond films according to experimental observations, which indicates second nucleations are opt to form at crystal boundaries and (100) faces.Free energy of a second nucleation contrasted with that of Forming a new growth step,it is showed that when carbon\|hydrogen radical concentration is higher,carbon\|hydrogen radical on substrate will heap up, at this time a second nucleation can form.Free energy of a second nucleation forming on crystal boundary is also calculated,which shows a second nucleation on crystal bonudary is spontaneous and it causes system free energy decrease. |
| |
| Keywords: | diamond second nucleation growth step carbon\|hydrogen radical |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
