Sub-0.1 μm NMOS transistors fabricated using laser-plasmapoint-source X-ray lithography |
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| Authors: | Rittenhouse C.E. Mansfield W.M. Kornblit A. Cirelli R.A. Tomes D. Celler G.K. |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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| Abstract: | We report the experimental results of the first MOSFET's ever fabricated using a laser plasma-source X-ray stepper. The minimum gate length of these transistors is 0.12 μm with an effective channel length of 0.075 μm. These transistors were patterned using a mix-and-match lithography scheme where the gate level was printed using a 1.4 nm plasma-source X-ray stepper while the other layers were patterned using optical lithography |
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