| 一种DC～30 GHz并联接触式RF MEMS开关的设计与制造研究 |
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| 引用本文： | 侯智昊,刘泽文,李志坚.一种DC～30 GHz并联接触式RF MEMS开关的设计与制造研究[J].光学精密工程,2009,17(8):1922-1927. |
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| 作者姓名： | 侯智昊 刘泽文 李志坚 |
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| 作者单位： | 清华大学,微电子学研究所,北京,100084 |
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| 基金项目： | 国家自然科学基金资助项目，国家973重点基础研究发展规划资助项目 |
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| 摘 要： | 介绍了一种适用于DC～30 GHz频率应用的并联接触式RF MEMS开关的设计与制造研究。利用低应力电镀Au桥膜作为上电极，实现了接触电极之间的Au-Au接触。使用Borofloat?玻璃作为衬底，内置射频信号与驱动电极旁路的隔离电阻，并且通过对上电极桥膜与CPW间距的优化设计，使其具有很低的插入损耗。所设计制造的并联接触式RF MEMS开关的下拉电压为60 V，上下电极的接触电阻为0.1 Ω。插入损耗为-0.03 dB@1 GH，-0.13 dB@10 GHz和-0.19 dB@20 GHz，在DC～30 GHz的频率范围内，其插入损耗都小于-0.5 dB；其隔离度为-47 dB@1 GHz，-30 dB@10 GHz和-25 dB@20 GHz，并且，其隔离度在DC～30 GHz的频率范围内都大于-23 dB。所设计的并联接触式RF MEMS开关适合于DC～30 GHz的频率范围内的应用，是一种宽应用频率范围的RF MEMS开关。
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| 关 键 词： | 微电子机械系统 RF MEMS开关 并联接触式 |
| 收稿时间： | 2008-09-01 |
| 修稿时间： | 2008-10-23 |
Design and fabrication of DC to 30 GHz DC-contact shunt RF MEMS switch |
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| HOU Zhi-hao,LIU Ze-wen,LI Zhi-jian.Design and fabrication of DC to 30 GHz DC-contact shunt RF MEMS switch[J].Optics and Precision Engineering,2009,17(8):1922-1927. |
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| Authors: | HOU Zhi-hao LIU Ze-wen LI Zhi-jian |
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| Affiliation: | HOU Zhi-hao,LIU Ze-wen,LI Zhi-jian(Institute of Microelectronics,Tsinghua University,Beijing 100084,China) |
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| Abstract: | The design and fabrication processes of a DC-contact shunt RF MEMS switch were studied to improve its performance. A low stress electroplated Au membrane was taken as an upper electrode to implement the Au-Au direct contact. BorofloatTM glass was used as a substrate and a inside resistance was used to isolate the crosstalk between radio-frequency signal and bias voltage. Then,the distance between Au membrane and Coplanar Waveguide(CPW) was optimized to lower the insertion losses of the switch. Experimental ... |
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| Keywords: | MEMS RF MEMS switch DC-contact shunt |
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