| 以注氮SiO_2作为铜互连技术中的新型阻挡层 |
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| 引用本文： | 张国海,夏洋,钱鹤,高文芳,于广华,龙世兵. 以注氮SiO_2作为铜互连技术中的新型阻挡层[J]. 半导体学报, 2001, 22(3): 271-274 |
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| 作者姓名： | 张国海 夏洋 钱鹤 高文芳 于广华 龙世兵 |
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| 作者单位： | [1]中国科学院微电子中心，北京100029 [2]北京科技大学，北京100083 |
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| 基金项目： | 国家自然科学基金;69936020; |
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| 摘 要： | 采用给 PECVD Si O2 中注入氮的方法 ,形成一薄层氮氧化硅 ,以此作为一种新型的扩散阻挡层 .不同热偏压条件下的 C- V测试结果和 XPS分析结果表明 ,该方法能起到对铜扩散的有效阻挡作用
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| 关 键 词： | 超大规模集成电路 互连 铜 阻挡层 |
| 文章编号： | 0253-4177（2001）03-0271-04 |
| 修稿时间： | 2000-10-05 |
A Novel Barrier to Copper Metallization by Implanting Nitrogen into SiO2 |
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| ZHANG Guo-hai,XIA Yang,QIAN He,GAO Wen-fang,YU Guang-hua,LONG Shi-bing. A Novel Barrier to Copper Metallization by Implanting Nitrogen into SiO2[J]. Chinese Journal of Semiconductors, 2001, 22(3): 271-274 |
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| Authors: | ZHANG Guo-hai XIA Yang QIAN He GAO Wen-fang YU Guang-hua LONG Shi-bing |
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| Abstract: | The barrier to the copper diffusion is one of the key technologies in copper metallization. A novel barrier has been presented, which is a thin film of silicon oxynitride formed by implanting nitrogen into PECVD silicon dioxide. The method proved highly effective to block the copper diffusion after high frequency C V measurements at different BTS (Bias Thermal Stress) conditions and the XPS (X ray Photoelectron Spectroscopy) analysis. Furthermore, this method has the advantage of simplifying the damascene process of copper metallization, which has also been analyzed and discussed in detail. |
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| Keywords: | ULSI interconnection copper barrier |
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