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电容式MEMS超声传感器设计与分析
引用本文:李玉平,何常德,张娟婷,张慧,宋金龙,薛晨阳.电容式MEMS超声传感器设计与分析[J].传感器与微系统,2014,33(11):73-75.
作者姓名:李玉平  何常德  张娟婷  张慧  宋金龙  薛晨阳
作者单位:1. 中北大学仪器科学与动态测试教育部重点实验室,山西太原030051;中北大学测试技术重点实验室,山西太原030051
2. 中北大学仪器科学与动态测试教育部重点实验室,山西太原,030051
基金项目:国家“863”计划资助项目,国家自然科学基金资助项目
摘    要:目前电容式MEMS超声传感器(CMUS)多为收发一体结构,但二种工作模式对传感器结构要求存在很大差异,设计时为了兼顾收发性能往往不能使传感器性能达到最优;此外,传统的电容式MEMS超声传感器还存在寄生电容大的缺点。针对以上问题,基于收发分离的思想,设计了一种专用作超声接收的MEMS电容式传感器,结构上采用上下电极引线互错,单元间电极联线交错的方式来减小寄生电容。通过理论分析和ANSYS仿真得到所设计传感器的最佳工作电压为586V,灵敏度为174.2fF/Pa,满足现有超声接收传感器的应用要求。

关 键 词:电容式MEMS超声传感器  接收传感器  ANSYS  寄生电容  灵敏度

Design and analysis of capacitive MEMS ultrasonic sensor
LI Yu-ping,HE Chang-de,ZHANG Juan-ting,ZHANG Hui,SONG Jin-long,XUE Chen-yang.Design and analysis of capacitive MEMS ultrasonic sensor[J].Transducer and Microsystem Technology,2014,33(11):73-75.
Authors:LI Yu-ping  HE Chang-de  ZHANG Juan-ting  ZHANG Hui  SONG Jin-long  XUE Chen-yang
Affiliation:LI Yu-ping, HE Chang-de, ZHANG Juan-ting , ZHANG Hui , SONG Jin-long , XUE Chen-yang ( 1. Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China)
Abstract:At present, most of capacitive MEMS ultrasonic sensor (CMUS) are used for both transmission and receiving,but there is a big difference on structure of the two operating modes, so the performance cannot obtain optimal under consideration of transmitting and receiving properties in structure design. Moreover, parasitic capacitance of traditional CMUS is relatively big. In order to solve these problems, based on the idea of transmitreceive separate mode, design a CMUS which is only used for ultrasonic receiving. The leads of top and bottom electrodes are stagger with each other and the connecting line between inter cells are in a cross stagger manner to reduce the parasitic capacitance. Theoretical analysis and ANSYS simulation show that the best working voltage is 586 V and sensitivity is 174.2 fF/Pa,which meets the requirements of current ultrasonic receiving sensor.
Keywords:CMUS  receiving sensor  ANSYS  parasitic capacitance  sensitivity
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