A 1/3-in 510(H)×492(V) CCD image sensor with mirror imagefunction |
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| Authors: | Hojo J Naito Y Mori H Foujikawa K Kato N Wakayama T Komatsu E Itasaka M |
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| Affiliation: | Sony Corp., Kanagawa; |
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| Abstract: | A 1/3-in optical format 510(H)×492(V) interline charge-coupled-device (CCD) image sensor with a mirror-image function has been developed. To realize both a normal image and a mirror image, the horizontal shift register (H-CCD) is transferred forward and backward by a four-electrode, quasi-two-phase clock drive. The unit cell size is 9.6(H)×7.5(V) μm2. An on-chip microlens has been developed to achieve a sensitivity of 28 mV/lx, which is higher than that of the conventional 1/2-in device. The hole accumulation diode (HAD) sensor used has the advantage of low dark current, negligibly small lag, high blooming suppression, and a variable-speed electronic shutter. The smear reduction level is -83 dB. Horizontal resolution of 330 TV lines is obtained |
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