Hyperabrupt junctions in Au-Si Schottky diodes by ion implantation |
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| Authors: | Brook P Whitehead CS |
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| Affiliation: | Services Electronics Research Laboratory, Baldock, UK; |
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| Abstract: | The application of ion implantation to the fabrication of Au-Si Schottky diodes with highly nonlinear capacitance/voltage characteristics is described. The capacitance/voltage characteristic and the derived impurity profile are given for a typical diode. The forward current/voltage characteristics are described, and an estimate of Au-Si barrier height is made. |
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