| 甚长波碲镉汞光伏探测器伏安特性分析 |
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| 引用本文： | 林立,刘世光,田震,程杰. 甚长波碲镉汞光伏探测器伏安特性分析[J]. 激光与红外, 2022, 52(11): 1666-1670 |
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| 作者姓名： | 林立 刘世光 田震 程杰 |
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| 作者单位： | 中国电子科技集团公司第十一研究所,北京 100015 |
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| 基金项目： | 国家重点研发计划项目(No.2016YFB0500700)资助。 |
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| 摘 要： | 分析了注入同质结N-on-P和液相外延异质结P-on-N碲镉汞甚长波红外探测器在不同工作温度下的I-V特性，并对R-V特性进行了仿真计算，对比了扩散电流、产生-复合电流、表面漏电流、带间隧穿电流和缺陷辅助隧穿电流等暗电流对两种器件R-V特性的不同影响。
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| 关 键 词： | 大气超光谱 甚长波红外探测器 碲镉汞 I-V特性 R-V特性 |
| 修稿时间： | 2021-10-31 |
Analysis of I V characteristics of HgCdTe VLWIRphotovoltaic detectors |
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| LIN Li,LIU Shi-guang,TIAN Zhen,CHENG Jie. Analysis of I V characteristics of HgCdTe VLWIRphotovoltaic detectors[J]. Laser & Infrared, 2022, 52(11): 1666-1670 |
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| Authors: | LIN Li LIU Shi-guang TIAN Zhen CHENG Jie |
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| Affiliation: | The 11th Research Institute of CETC,Beijing 100015,China |
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| Abstract: | In this paper,the I V characteristics of B ion implanted N on P homojunction and LPE P on N heterojunction HgCdTe VLWIR photovoltaic detectors at different operating temperatures are analyzed,and the R V characteristics are simulated and calculated to compare the different effects of dark currents such as diffusion current,generation recombination current,surface leakage current,direct band to band tunneling current and trap assisted tunneling current on the R V characteristics of the two devices. |
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