| 氨化Si基Ga2O3/In制备GaN薄膜 |
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| 引用本文： | 王福学,薛成山,庄惠照,张晓凯,艾玉杰,孙丽丽,杨兆柱,李红.氨化Si基Ga2O3/In制备GaN薄膜[J].功能材料,2007,38(2):231-233. |
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| 作者姓名： | 王福学 薛成山 庄惠照 张晓凯 艾玉杰 孙丽丽 杨兆柱 李红 |
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| 作者单位： | 山东师范大学,半导体所,山东,济南,250014 |
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| 摘 要： | 研究了Ga2O3/In 膜反应自组装制备GaN薄膜,再将Ga2O3/In膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM),原子力显微镜(AFM),透射电镜(TEM)对样品进行结构,形貌的分析.测试结果表明:用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好.
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| 关 键 词： | GaN Ga2O3/In 氨化 磁控溅射 |
| 文章编号： | 1001-9731(2007)02-0231-03 |
| 修稿时间： | 2006-08-21 |
Formation of GaN film by ammoniating Ga2O3 film on in layer deposited on Si(111) substrates |
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| WANG Fu-xue,XUE Cheng-shan,ZHUANG Hui-zhao,ZHANG Xiao-kai,AI Yu-jie,SUN Li-li,YANG Zhao-zhu,LI Hong.Formation of GaN film by ammoniating Ga2O3 film on in layer deposited on Si(111) substrates[J].Journal of Functional Materials,2007,38(2):231-233. |
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| Authors: | WANG Fu-xue XUE Cheng-shan ZHUANG Hui-zhao ZHANG Xiao-kai AI Yu-jie SUN Li-li YANG Zhao-zhu LI Hong |
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| Abstract: | GaN films were synthesized by ammoniating Ga2O3/In films deposited on Si(111)substrates.The sample were characterized by X-ray diffraction(XRD),fourier transformed spetra(FTIR),scanning electron microscopy(SEM),atomic force microscopy(AFM)and transmission electron microscopy(TEM).The results show that the films synthesized were hexagonal GaN single crystals. |
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| Keywords: | GaN Ga2O3 / In ammoniating magnetron sputtering |
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