| 应用改进的热场生长低位错SI-CaAs单晶 |
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| 引用本文： | 谢自力,夏德谦,陈宏毅,朱志明.应用改进的热场生长低位错SI-CaAs单晶[J].固体电子学研究与进展,1992(3). |
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| 作者姓名： | 谢自力 夏德谦 陈宏毅 朱志明 |
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| 作者单位： | 南京电子器件研究所 210016
(谢自力，夏德谦，陈宏毅)，南京电子器件研究所 210016(朱志明) |
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| 摘 要： | 报道在国产JW一0002型高压单晶炉内设计了一种改进的LEC热场装置,改善了加热区的温度分布,使炉内覆盖剂B_2O_3的轴向温度梯度减少到30～60℃/cm,拉制的φ50mm,<100>晶向的SI—GaAs单晶,其位错密度低于5×10~3cm~(-2),局部无位错。
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| 关 键 词： | 热场 温度梯度 位错密度 半绝缘砷化镓 |
Semi-insulating GaAs Crystals with Low Dislocation Density Grown by Modified Heating System |
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| Xie Zili,Xia Deqian.Chen Hongyi,Zhu Zhiming.Semi-insulating GaAs Crystals with Low Dislocation Density Grown by Modified Heating System[J].Research & Progress of Solid State Electronics,1992(3). |
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| Authors: | Xie Zili Xia DeqianChen Hongyi Zhu Zhiming |
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| Abstract: | This paper describes a LEC thermal field apparatus with improved effective thermal configuration in JW-0002 type high pressure pulling system. The axial temperature gradient between the coating material B2O3 and GaAs melt is reduced to 30-60/cm. The <100> dislocation densities of the grown semi-insulating GaAs single crystals with a diameter of 50 mm are less than 5X103/cm2 and free in some regions. |
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| Keywords: | Thermal Field Temperature Gradients Dislocation Densities Si-GaAs |
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