| 菱形NiFe薄膜单元的自发磁化及剩磁状态的研究 |
| |
| 引用本文： | 汤如俊,张万里,张文旭,彭斌. 菱形NiFe薄膜单元的自发磁化及剩磁状态的研究[J]. 固体电子学研究与进展, 2007, 27(1): 24-27,31 |
| |
| 作者姓名： | 汤如俊 张万里 张文旭 彭斌 |
| |
| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054 |
| |
| 基金项目： | 国家重大基础研究与发展项目 |
| |
| 摘 要： | 利用微磁学方法系统研究了纳米尺度的NiFe薄膜菱形单元的自发磁化状态及剩磁状态。研究结果表明,在不同的尺寸下,菱形单元将有不同的自发磁化状态及剩磁状态。在单元的长宽尺寸小于某个临界尺寸时,菱形单元结构呈现单畴态。同时还分析了菱形NiFe单元作为磁性随机存储器(MRAM)存储单元时的要求。
|
| 关 键 词： | NiFe薄膜 菱形 微磁学模拟 磁性随机存储器 |
| 文章编号： | 1000-3819（2007）01-024-04 |
| 修稿时间： | 2005-04-282005-07-23 |
Micromagnetic Investigation on the Spontaneous and Remnant Magnetization State of the Diamond-shaped NiFe Films |
| |
| TANG Rujun,ZHANG Wanli,ZHANG Wenxu,PENG Bin. Micromagnetic Investigation on the Spontaneous and Remnant Magnetization State of the Diamond-shaped NiFe Films[J]. Research & Progress of Solid State Electronics, 2007, 27(1): 24-27,31 |
| |
| Authors: | TANG Rujun ZHANG Wanli ZHANG Wenxu PENG Bin |
| |
| Affiliation: | School of Microelectronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, CHN |
| |
| Abstract: | The spontaneous and remnant magnetization states of the nano-size diamond-shaped NiFe film elements have been investigated by the micromagnetic simulation.The results show that various spontaneous and remnant magnetization states appear under different element dimension.When the length and width of the element are smaller than a critical value,a single domain spontaneous and remnant magnetization state was obtained.The size requirments of the diamond-shaped element as a memory unit in the magnetic random access memory(MRAM) are also analyzed in this paper. |
| |
| Keywords: | NiFe film diamond micromagnetic simulation magnetic random access memory |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
