InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulatorsexhibiting better than 8:1 contrast ratio for 1.55-μm applicationsgrown by gas-source MBE |
| |
| Authors: | Pathak R.N. Goossen K.W. Cunningham J.E. Jan W.Y. |
| |
| Affiliation: | AT&T Bell Labs., Holmdel, NJ; |
| |
| Abstract: | We report growth of In0.53Ga0.47 As-InP multiple quantum well (MQW) modulators operating at 1.55 μm for fiber-to-the-home applications. By employing a 200-period InGaAs-InP MQW stack in the intrinsic region of a p-i-n structure and working in reflection, we have been able to realize surface-normal modulator devices that exhibit better than an 8:1 contrast ratio. This is the highest contrast ratio reported to date for this type of device working at this wavelength |
| |
| Keywords: | |
|
