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Metal–Semiconductor Phase‐Transition in WSe2(1‐x)Te2x Monolayer
Authors:Peng Yu  Junhao Lin  Linfeng Sun  Quang Luan Le  Xuechao Yu  Guanhui Gao  Chuang‐Han Hsu  Di Wu  Tay‐Rong Chang  Qingsheng Zeng  Fucai Liu  Qi Jie Wang  Horng‐Tay Jeng  Hsin Lin  Achim Trampert  Zexiang Shen  Kazu Suenaga  Zheng Liu
Affiliation:1. School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore;2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;3. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore;4. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore;5. Paul‐Drude‐Institut für Festk?rperelektronik Leibniz‐Institut im Forschungsverbund Berlin Hausvogteiplatz 5‐7, Berlin, Germany;6. Department of Physics, National University of Singapore, Singapore;7. Department of Physics, National Tsing Hua University, Hsinchu, Taiwan;8. Institute of Physics, Academia Sinica, Taipei, Taiwan
Abstract:
Keywords:2D materials  band gap  field‐effect transistor  metal  semiconductors
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