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Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
Authors:Chao Li  Bin Gao  Yuan Yao  Xiangxiang Guan  Xi Shen  Yanguo Wang  Peng Huang  Lifeng Liu  Xiaoyan Liu  Junjie Li  Changzhi Gu  Jinfeng Kang  Richeng Yu
Affiliation:1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China;2. Institute of Microelectronics, Peking University, Beijing, P. R. China;3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, P. R. China
Abstract:
Keywords:electron holography  energy‐filtered image  in situ TEM  oxygen vacancies  resistive switching
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