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Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)
Authors:Chengbin Pan  Yanfeng Ji  Na Xiao  Fei Hui  Kechao Tang  Yuzheng Guo  Xiaoming Xie  Francesco M. Puglisi  Luca Larcher  Enrique Miranda  Lanlan Jiang  Yuanyuan Shi  Ilia Valov  Paul C. McIntyre  Rainer Waser  Mario Lanza
Affiliation:1. Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, Suzhou, China;2. Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA;3. Department of Materials Science and Engineering, Stanford University, CA, 94305, USA;4. Rowland Institute, Harvard University, Cambridge, MA, USA;5. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China;6. DISMI, Università di Modena e Reggio Emilia, Reggio Emilia, Italy;7. Electronic Engineering Department, Universitat Autonoma de Barcelona, Cerdanyola del Vallés, Spain;8. Forschungszentrum Jülich GmbH, Jülich, Germany
Abstract:
Keywords:bipolarity  hexagonal boron nitride  resistive switching  RRAM
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