Effect of substrate bias on the properties of plasma deposited organosilicone (pp-HMDSN) thin films |
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| Authors: | S. Saloum S. A. Shaker R. Hussin M. N. Alkafri A. Obaid M. Alsabagh |
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| Affiliation: | Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria,Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria,Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria,Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria,Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria and Physics Department, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria |
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| Abstract: | Organosilicone thin films have been deposited by plasma polymerization (pp) in a plasma enhanced chemical vapor deposition (PECVD) system using hexamethyldisilazane (HMDSN:C6H19Si2N) as a monomer precursor, at different biases of the stainless-steel substrate holder. The substrate bias affected film thickness, surface morphology, chemical composition and photoluminescence (PL) emission. For a negatively biased substrate, it is found that the film thickness is the minimum, while the porosity and PL emission are the maximum. For a positively biased substrate, the thickness and the ratio of Si/N are the maximum which correspond to a blue shift of the PL emission in comparison with the case of non-biased grounded substrate. In addition, the characterization of the plasma using a single cylindrical Langmuir probe has been performed to obtain information about both the electron density and the positive ion energy, where it can be concluded that the ion energy plays a major role in determining film thickness. |
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