| GaP高能重离子辐照损伤及退火的正电子湮没研究 |
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| 引用本文： | 王荣,黄龙,徐勇军,朱升云. GaP高能重离子辐照损伤及退火的正电子湮没研究[J]. 核技术, 2000, 23(6): 359-362 |
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| 作者姓名： | 王荣 黄龙 徐勇军 朱升云 |
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| 作者单位： | 1. 中国原子能科学研究院 北京102413
2. 新疆工学院基础部 |
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| 基金项目： | 国家自然科学基金资助(19835050)和预研基金资助(97J11.2.8HZ010) |
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| 摘 要： | 用正电子湮没寿命技术研究２．４＊１０＾１５／ｃｍ＾２和２．２＊１０＾１６／ｃｍ＾２ ８５ＭｅＶ＾１９Ｆ离子辐照ＧａＰ的辐照损伤及其退火效应。结果表明，高低两种注量辐照在ＧａＰ中产生浓度较高的单空位。在３００－１０２３Ｋ温度范围内测量了正电子湮没寿命温度的变化。低注量辐照品在退火过程中有双空位的形成；而高注量辐照样品中观察到比双空位更复杂的缺陷形式，其完全被退火的温度比低剂量辐照的高２５０Ｋ。
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| 关 键 词： | ^19F离子 辐照损伤 退火效应 正电子湮没 磷化镓 |
| 修稿时间： | 2000-01-07 |
Study of radiation damage and annealing effects in high energy heavyion irradiated GaP by positron annihilation |
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| WANG Rong,HUANG Long,Xu Yongjun,ZHU Shengyun. Study of radiation damage and annealing effects in high energy heavyion irradiated GaP by positron annihilation[J]. Nuclear Techniques, 2000, 23(6): 359-362 |
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| Authors: | WANG Rong HUANG Long Xu Yongjun ZHU Shengyun |
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| Abstract: | The radiation defects and damage in N-type GaP irradiated by 85MeV 19F ions at fluences of 2.4×1015/cm2 and 2.2×1016/cm2 as a function of annealing temperature from 300K to 1023K were investigated by positron annihilation lifetime technique. Monovacancies were created in the irradiated N-type GaP, and the concentration of monovacancies was proportional to the irradiation fluence. Defects more complicated than di-vacancies in the high fluence irradiated GaP and di-vacancies in low fluence irradiated GaP were observed during annealing process, respectively. The complete annealing temperature of the defects for low fluence irradiated GaP was 250K lower than that for high fluence irradiated GaP. |
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| Keywords: | GaP ~(19)F ions Radiation damage Annealing effect Positron annihilation |
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