| CMOS反相器高功率微波扰乱效应分析 |
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| 引用本文： | 张永胜.CMOS反相器高功率微波扰乱效应分析[J].火控雷达技术,2009,38(2):82-85. |
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| 作者姓名： | 张永胜 |
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| 作者单位： | 电子科技大学,成都,610054 |
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| 摘 要： | 通过对CMOS数字电路器件及RF脉冲扰乱效应的模拟分析,比较了注入不同频率与功率的RF扰乱脉冲时对CMOS反相器输出逻辑电平扰乱甚至翻转的效应过程。
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| 关 键 词： | CMOS反相器 扰乱效应 注入实验 |
Analysis of High Power Microwave Disturbance Effects on a CMOS Inverter |
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| Zhang Yongsheng.Analysis of High Power Microwave Disturbance Effects on a CMOS Inverter[J].Fire Control Radar Technology,2009,38(2):82-85. |
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| Authors: | Zhang Yongsheng |
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| Affiliation: | University of Electronic Science and Technology of China;Chengdu 610054 |
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| Abstract: | By simulation analysis of RF pulse disturbance effect on CMOS digital circuit components level,the process of disturbance even the turnover effect on output logic level of CMOS inverter is compared while injecting RF disturbance pulse with different frequency and power. |
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| Keywords: | CMOS inverter disturbance effects injection experiment |
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