| ZAO薄膜使用射频溅射法生长之参数的研究 |
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| 引用本文： | 耿茜,汪建华,王升高.ZAO薄膜使用射频溅射法生长之参数的研究[J].应用化工,2006,35(12):910-912,917. |
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| 作者姓名： | 耿茜 汪建华 王升高 |
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| 作者单位： | 武汉工程大学,等离子体化学与新材料重点实验室,湖北,武汉,430073 |
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| 基金项目： | 湖北省科技攻关项目;湖北省高等学校优秀中青年科技创新团队资助计划项目 |
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| 摘 要： | 以氧化铝锌陶瓷为溅射靶材,在氩气环境下,使用射频溅射法在玻璃基片上制备氧化铝锌(ZAO)薄膜。通过调节气体压强、基片温度、溅射功率制膜,得到以C轴(002)为选择取向的氧化锌薄膜。由XRD、原子力显微镜(AFM)等对薄膜进行分析。结果表明,制备薄膜的最佳条件为:溅射压强0.4 Pa,溅射功率200 W,基片温度300℃。
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| 关 键 词： | ZAO陶瓷靶材 ZAO薄膜 RF溅射 XRD 原子力显微镜 |
| 文章编号： | 1671-3206（2006）12-0910-03 |
| 收稿时间： | 2006-09-04 |
| 修稿时间： | 2006-09-04 |
Study of ZAO thin films process parameter by RF magnetron sputtering |
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| GENG Qian,WANG Jian-hua,WANG Sheng-gao.Study of ZAO thin films process parameter by RF magnetron sputtering[J].Applied chemical industry,2006,35(12):910-912,917. |
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| Authors: | GENG Qian WANG Jian-hua WANG Sheng-gao |
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| Abstract: | ZAO Films were deposited on glass substrates by using R.F magnetron sputtering from ZAO target under argon conditions.The work pressure,R.F power,and the temperate of substrate were investigated to acquire ZAO(002) films.Analysed the ZAO film with XRD and AFM,the results showed that the best condition of ZAO thin film obtained are as follows:work pressure is 0.4 Pa,R.F power is 200 W and the temperature of substrate is 300℃. |
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| Keywords: | XRD |
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