| 大功率GaAs/GaAlAs单量子阱激光器 |
| |
| 引用本文： | 张正德,黄以明,章其林. 大功率GaAs/GaAlAs单量子阱激光器[J]. 微纳电子技术, 1993, 0(3) |
| |
| 作者姓名： | 张正德 黄以明 章其林 |
| |
| 作者单位： | 机电部第13研究所，机电部第13研究所，机电部第13研究所 石家庄 050051，石家庄 050051，石家庄 050051 |
| |
| 摘 要： | 采用MOCVD技术在φ40mmGaAs衬底上研制成大功率GaAs/GaAlAs单量子阱激光器。该激光器激射波长为830～870nm,室温CW阈值电流密度小于350A/cm~2,最低值为310A/cm~2,输出光功率大于200mW/(单面,未镀膜)。
|
| 关 键 词： | 金属有机化学汽相淀积 GaAs/GaAlAs 单量子阱 激光器 |
High Power GaAs/GaAlAs SQW Laser Diode |
| |
| Zhang Zhengde,Huang Yiming,Zhang Qilin. High Power GaAs/GaAlAs SQW Laser Diode[J]. Micronanoelectronic Technology, 1993, 0(3) |
| |
| Authors: | Zhang Zhengde Huang Yiming Zhang Qilin |
| |
| Abstract: | High power GaAs/GaAlAs single quantum well(SQW) LD have been fabricated on φ40mm GaAs substrate grown by MOCVD. Its emitting wavelength is 830～870nm. The threshold current density is less than 350A/cm~2 at room temperature, and the lowest value is 310A/cm~2. The CW linear output power at room temperature is more than 200mW per-facet. |
| |
| Keywords: | MOCVD GaAs/GaAlAs SQW Laser |
| 本文献已被 CNKI 等数据库收录！ |
