| 溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜 |
| |
| 引用本文： | 沈军,欧阳玲,林雪晶,谢志勇,罗爱云.溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜[J].稀有金属材料与工程,2008,37(Z2):76-79. |
| |
| 作者姓名： | 沈军 欧阳玲 林雪晶 谢志勇 罗爱云 |
| |
| 作者单位： | 同济大学,波耳固体物理研究所,上海,200092 |
| |
| 基金项目： | National Natural Science Foundation of China(Grant No.20133040,69978017,50572073),Chinese National Foundation of High Technology(2002AA842052),Shanghai Key Subject Program,Shanghai Phosphor Program(05QMH1413),and Trans-Century Training Program Foundation for the Talents by Ministry of Education of People's Republic of China |
| |
| 摘 要： | 采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜.以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜.经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定.由椭偏仪测得热处理后的薄膜的折射率低至1.18,而薄膜的介电常数为2.14.
|
| 关 键 词： | 介孔薄膜 溶胶-凝胶 低折射率 低介电常数 |
| 文章编号： | 1002-185X(2008)S2-330-04 |
| 修稿时间： | 2007年11月22 |
Preparation of Low-k and Low-n Mesoporous Silica Films via Sol-Gel Process |
| |
| Shen Jun,Ouyang Ling,Lin Xuejing,Xie Zhiyong,Luo Aiyun.Preparation of Low-k and Low-n Mesoporous Silica Films via Sol-Gel Process[J].Rare Metal Materials and Engineering,2008,37(Z2):76-79. |
| |
| Authors: | Shen Jun Ouyang Ling Lin Xuejing Xie Zhiyong Luo Aiyun |
| |
| Abstract: | Mesopomus silica films were successfully prepared through sol-gel process with evaporation-induced self-assembly.Tetraethoxysilane(TEOS)was used as silica precursor and Cetyltrimethylammonium bromide(CTAB)as the templating agent.The films were deposited on the silicon wafer or glass substrate using a dip-coating method.The refractive index(k)of the mesoporous films was 1.18,while the dielectric constant(n)was 2.14. |
| |
| Keywords: | mesoporous films sol-gel low dielectric constant low refractive index |
| 本文献已被 万方数据 等数据库收录！ |
|
