| K(TCNQ)薄膜的制备及其电双稳特性 |
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| 引用本文： | 蔡亲佳,陈国荣,莫晓亮,范智勇,顾海华,姚彦,杨剑,华中一,徐华华. K(TCNQ)薄膜的制备及其电双稳特性[J]. 真空科学与技术学报, 2001, 21(5): 364-367 |
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| 作者姓名： | 蔡亲佳 陈国荣 莫晓亮 范智勇 顾海华 姚彦 杨剑 华中一 徐华华 |
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| 作者单位： | 1. 复旦大学材料科学系
2. 复旦大学化学系 |
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| 摘 要： | 在真空环境下,首次利用固态化学置换反应制备了K(TCNQ)薄膜,其分子结构与已报道过的K(TCNQ)单晶、多晶相同.但不同的是,在300K以上,K(TCNQ)薄膜具有可逆的双稳特性.因此预计在光电开关和电双稳存储器方面具有广泛的应用前景.
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| 关 键 词： | 固态化学置换反应 K(TCNQ)薄膜 电双稳 电荷转移络合物 |
| 文章编号： | 0253-9748(2001)05-0364-04 |
| 修稿时间： | 2000-12-04 |
Preparation and Electrical Bistable Property of K(TCNQ) Thin Film |
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| Cai Qinjia,Chen Guorong ),Mo Xiaoliang,Fan Zhiyong,Gu Haihua,Yao Yan,Yang Jian,Hua Zhongyi. Preparation and Electrical Bistable Property of K(TCNQ) Thin Film[J]. JOurnal of Vacuum Science and Technology, 2001, 21(5): 364-367 |
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| Authors: | Cai Qinjia Chen Guorong ) Mo Xiaoliang Fan Zhiyong Gu Haihua Yao Yan Yang Jian Hua Zhongyi |
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| Affiliation: | Cai Qinjia,Chen Guorong 1),Mo Xiaoliang,Fan Zhiyong,Gu Haihua,Yao Yan,Yang Jian,Hua Zhongyi |
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| Abstract: | The K(TCNQ) thin film was prepared by a method of solid chemical replacement reaction in vacuum.The molecular structure obtained in K(TCNQ) thin film is the same as that in K(TCNQ) single crystal and polycrystalline solids.The film shows electrical bistable behavior above 300 K,which is different from single crystal of K(TCNQ).It is expected that this material will be applied to fabrication of photo electrical switch and in electrical information storage. |
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| Keywords: | Solid chemical replacement reaction K(TCNQ) thin film Electrical bistable Charge transfer complex |
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