| 一种新颖的低噪声放大器的噪声优化方法 |
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| 引用本文： | 耿志卿,王海永,吴南健.一种新颖的低噪声放大器的噪声优化方法[J].半导体学报,2009,30(10):105015-6. |
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| 作者姓名： | 耿志卿 王海永 吴南健 |
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| 摘 要： | This paper proposes a novel noise optimization technique.The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier（LNA）circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation,respectively,by mathematical analysis and reasonable approximation methods.LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae.We design a 1.8 GHz LNA in a TSMC 0.25 μm CMOS process.The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW,demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.
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| 关 键 词： | 低噪声放大器 电感电路 CMOS 优化技术 噪声系数 放大器电路 低功耗 噪声优化 |
| 修稿时间： | 5/25/2009 4:01:42 PM |
A novel noise optimization technique for inductively degenerated CMOS LNA |
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| Geng Zhiqing,Wang Haiyong and Wu Nanjian.A novel noise optimization technique for inductively degenerated CMOS LNA[J].Chinese Journal of Semiconductors,2009,30(10):105015-6. |
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| Authors: | Geng Zhiqing Wang Haiyong and Wu Nanjian |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | low noise optimization noise factor |
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| Keywords: | low noise optimization noise factor |
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