| 晶向对InGaP/GaAs HBT性能的影响 |
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| 引用本文： | 石瑞英,刘训春,孙海峰,袁志鹏.晶向对InGaP/GaAs HBT性能的影响[J].半导体学报,2004,25(4):446-449. |
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| 作者姓名： | 石瑞英 刘训春 孙海峰 袁志鹏 |
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| 作者单位： | [1]四川大学物理系,成都610064 [2]中国科学院微电子中心,北京100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 在对In Ga P/ Ga As HBT特性的研究中发现,发射极长边与主对准边垂直(0 1 1 ]方向)和平行(0 1 1 ]方向)放置时,其直流电流增益和截止频率是不同的.0 1 1 ]方向的直流电流增益远远大于0 1 1 ]方向,而它的截止频率则略小于0 1 1 ]方向.文献中认为电流增益的不同是压电效应产生的,但这种观点并不能很好地解释截止频率的晶向依赖性.文中用压电效应和两个互相垂直方向上发射区侧向腐蚀形状的不同很好地解释了所有实验结果
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| 关 键 词： | InGaP/GaAsHBT晶向效应 直流电流增益 截止频率 压电效应 侧向腐蚀 |
| 文章编号： | 0253-4177(2004)04-0446-04 |
| 修稿时间： | 2003年3月21日 |
Orientation Effects on InGaP/GaAs HBT |
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| Shi Ruiying ,Liu Xunchun ,Sun Haifeng and Yuan Zhipeng.Orientation Effects on InGaP/GaAs HBT[J].Chinese Journal of Semiconductors,2004,25(4):446-449. |
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| Authors: | Shi Ruiying Liu Xunchun Sun Haifeng and Yuan Zhipeng |
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| Affiliation: | Shi Ruiying 1,2,Liu Xunchun 2,Sun Haifeng 2 and Yuan Zhipeng 2 |
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| Abstract: | Orientation effect on self-aligned InGaP/GaAs HBT is described.The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .But it shows slightly better RF performance for orientation with .f. t 69GHz compared to .f. t of 62GHz for the orientation.In previous paper,the DC current gain difference of between the two orientation transistors is attributed to the piezoelectric effect,but the difference of .f. t is not explained.It is proposed that the dependence of the characteristics is attributed to both piezoelectric effect and the difference between etched pattern in different directions. |
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| Keywords: | InGaP/GaAs HBT orientation effect DC current gain piezoelectric effect cut-off frequency etched pattern |
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