| 放电等离子快速烧结SiC晶须增强Si3N4BN层状复合材料 |
| |
| 引用本文： | 李翠伟,黄勇,汪长安,汤珂,李淑琴.放电等离子快速烧结SiC晶须增强Si3N4BN层状复合材料[J].无机材料学报,2002,17(6):1220. |
| |
| 作者姓名： | 李翠伟 黄勇 汪长安 汤珂 李淑琴 |
| |
| 作者单位： | 清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室 北京 100084 |
| |
| 摘 要： | 采用放电等离子烧结技术(SPS)快速烧结了SiC晶须增强的Si3N4/BN层状复合材料.利用SPS技术,在烧结温度为1650℃、保温15min的条件下,材料的密度可达3.18g/cm3,抗弯强度高达600MPa,断裂功达到3500J/m2.研究表明:特殊的层状结构、SiC晶须的拔出与折断是材料断裂功提高的主要原因.X射线衍射及扫描电子显微镜研究表明:α-Si3N4已经在短短的烧结过程中全部转变成长柱状的β-Si3N4,并且长柱状的β-Si3N4和SiC晶须具有明显的织构.
|
| 关 键 词： | 放电等离子烧结 层状复合材料 Si3N4 |
| 收稿时间： | 2001-09-24 |
| 修稿时间： | 2001-11-30 |
Fabrication of SiC Whisker Reinforced Laminated Si3N4/BN Ceramics by Spark Plasma Sintering |
| |
| LI Cui-Wei,HUANG Yong,WANG Chang-An,TANG Ke,LI Shu-Qin.Fabrication of SiC Whisker Reinforced Laminated Si3N4/BN Ceramics by Spark Plasma Sintering[J].Journal of Inorganic Materials,2002,17(6):1220. |
| |
| Authors: | LI Cui-Wei HUANG Yong WANG Chang-An TANG Ke LI Shu-Qin |
| |
| Affiliation: | State key Lab of New Ceramics and Fine Processing; Department of Materials Science and Engineering; Tsinghua University; Beijing 100084; China |
| |
| Abstract: | SiC whisker reinforced laminated Si3N4/BN ceramics with additives Y2O3, Al2O3 and MgO were prepared by spark plasma sintering(SPS) in 13min of heating to 1650℃ and 15min dwell time. The density of the samples densified by SPS was 3.18g/cm3. Bending strength reached 600 MPa, and the work of fracture reached 3500 J/m2. The arrangement of hard Si3N4 layer and soft BN layer, the pull-out and broken of SiC whisker were the main reason for improving toughness of this ceramic. XRD and SEM indicated SiC whisker, long rod like β-Si3N4 and platelet like hex-BN were the main phase and SiC whisker, long rod like β-Si3N4 had strong preferred orientation. |
| |
| Keywords: | Si3N4 |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《无机材料学报》浏览原始摘要信息 |
|
点击此处可从《无机材料学报》下载全文 |
|
