| 高场应力对隧道氧化层电特性的影响 |
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| 引用本文： | 于宗光.高场应力对隧道氧化层电特性的影响[J].半导体技术,1999,24(3):19-24,27. |
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| 作者姓名： | 于宗光 |
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| 作者单位： | 华晶集团中央研究所,无锡,214035 |
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| 基金项目： | 江苏省青年科技人才基金 |
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| 摘 要： | 详细研究了Ｎ＾＋埋层－隧道氧化层－多晶硅电容和Ｐ型衬底－隧道氧化层－多晶硅电容在高场应力下的高频Ｃ－Ｖ特性和Ｉ－Ｖ特性的漂移，以及两种电容在隧道氧化层中陷阱电荷的产生现象。
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| 关 键 词： | 隧道氧化层 高场 陷阱电荷 应力 |
Influence of High Field on Electronic Characteristics of the Tunnel Oxide |
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| Yu Zongguang.Influence of High Field on Electronic Characteristics of the Tunnel Oxide[J].Semiconductor Technology,1999,24(3):19-24,27. |
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| Authors: | Yu Zongguang |
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| Abstract: | In this paper,the degradation of the I V,C V characteristics of the N + buried layer tunnel oxide polysilicon capacitor and the P substrate tunnel oxide polysilicon capacitor after high field stress is studied systematically.The generation of the trapped charges in the tunnel oxide of the capacitors during high field stress is analyzed. |
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| Keywords: | Tunnel oxide High field Trapped charges Stress |
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